HIGH-TEMPERATURE HIGH-DOSE C ION-IMPLANTATION IN EPITAXIAL SIGE

Si1-xGex epitaxial layers fully strained (x = 0.27) and relaxed (x = 0 .55) have been implanted with C ions at 500 degrees C. Implantation en ergy and doses were selected to obtain the C peak in the central regio n of the SiGe layer, with a concentration similar to the Ge content. T he implanted layers have been analyzed by Raman scattering, X-ray diff raction, transmission electron microscopy and secondary ion mass spect roscopy, The data obtained show the direct synthesis of beta-SIC preci pitates aligned in relation to the SiGe lattice after the implantation , as well as a Ge enrichment and stress relaxation of the SiGe lattice . For the relaxed layer a significant Ge redistribution from the impla nted region is observed.