RADIATION-DAMAGE AND ANNEALING BEHAVIOR OF GE-IMPLANTED SIC()

In recent years, single-crystal SiC has become an important electronic material due to its excellent physical and chemical properties. The p resent paper reports a study of the defect reduction and recrystallisa tion during annealing of Ge+-implanted 6H-SiC. Implants have been perf ormed at 200 keV with doses of 1 x 10(14) and 1 x 10(15) cm(-2). Furna ce annealing has been carried out at temperatures of 500, 950 and 1500 degrees C. Three analytical techniques including Rutherford backscatt ering spectrometry in conjunction with channelling (RBS/C), positron a nnihilation spectroscopy (PAS) and cross-sectional transmission electr on microscopy (XTEM) have been employed for sample characterisation. I t has been shown that damage removal is more complicated than in ion-i mplanted Si. The recrystallisation of amorphised SiC layers has been f ound to be unsatisfactory for temperatures up to 1500 degrees C, The u se of ion-beam-induced epitaxial crystallisation (IBIEC) has been more successful as lattice regrowth, although still imperfect, has been ob served to occur at a temperature as low as 500 degrees C.