MICROSTRUCTURAL CHARACTERIZATION OF AMORPHIZED AND RECRYSTALLIZED 6H-SIC

Authors
PACAUD Y SKORUPA W STOEMENOS J
Citation
Y. Pacaud et al., MICROSTRUCTURAL CHARACTERIZATION OF AMORPHIZED AND RECRYSTALLIZED 6H-SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 181-185
Citations number
14
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
120
Issue
1-4
Year of publication
1996
Pages
181 - 185
Database
ISI
SICI code
0168-583X(1996)120:1-4<181:MCOAAR>2.0.ZU;2-X
Abstract
The mode of recrystallization of 6H-SiC implanted at 200 keV with a do se of 1 x 10(15) Ge+ cm(-2) and subsequently annealed at 1500 degrees C for 10 min, was studied by combined cross-section and planar view tr ansmission electron microscopy techniques. The type of defects develop ed during recrystallization and their role in the 6H to 3C (cubic) tra nsformation of the recrystallized zone is discussed. The instability o f the 6H-SiC polytype and the domination of the 3C-SiC is attributed t o the inability to apply the step-controlled growth mechanism, which i s essential for the growth of 6H-SiC, in the amorphous zone.