RADIATION-DAMAGE ANNEALING OF HG IMPLANTED INP

Authors
CORREIA JG MARQUES JG SOARES JC ALVES E DASILVA MF FREITAG K VIANDEN R
Citation
Jg. Correia et al., RADIATION-DAMAGE ANNEALING OF HG IMPLANTED INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 244-247
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
120
Issue
1-4
Year of publication
1996
Pages
244 - 247
Database
ISI
SICI code
0168-583X(1996)120:1-4<244:RAOHII>2.0.ZU;2-3
Abstract
The formation of shallow p-type layers in InP has been previously achi eved by Hg implantation, In this work, for the first time, microscopic information of the near surrounding of the Hg dopant and the recovery of the damaged layer is derived combining RES and hyperfine interacti ons studies. It is shown that most of the radiation damage created by the implantation can be recovered with a two step furnace annealing at 400 degrees C and 800 degrees C using a proximity cap.