PLASMA IMMERSION ION-IMPLANTATION FOR METALLURGICAL AND SEMICONDUCTORRESEARCH-AND-DEVELOPMENT

Plasma Source Ion Implantation, also termed Plasma Immersion Ion Impla ntation, is a rapidly developing material modification technique for t reating the near-surface regions of various kinds of materials. It mak es use of high-energy ions which are accelerated by a high voltage pul se from a plasma which wraps the workpiece to be treated. The ions are implanted into the material causing effects similar to those of conve ntional beam-line ion implantation. Research and development of plasma immersion ion implantation has focused in two main fields, treatment of metals for improved wear and corrosion performance, and modificatio n of semiconductors. The paper discusses examples from both fields, wi th nitrogen PIII of steels and aluminum, and modification of thin meta l films. From the semiconductor field, trenchwall doping, ultra-shallo w doping with boron, and oxygen ion implantation for SIMOX formation i s treated.