Dy. Ban et al., INTERFACE FORMATION OF GE ZNSE(100) AND GE/ZNS(111) HETEROJUNCTIONS STUDIED BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Acta physica Sinica, 5(8), 1996, pp. 590-600
The microscopic evolution of interface formation between Ge and II-VI
compounds such as ZnSe and ZnS single crystals has been studied by syn
chrotron radiation photoemission spectroscopy and low energy electron
diffraction. Core level intensity measurements from the substrate as w
ell as from the overlayer show a nearly ideal two-dimensional growth m
ode for the deposition of Ge on ZnSe(100) surface. However, there is a
certain deviation from the ideal two-dimensional mode in the case of
Ge/ZnS(111) due to the diffusion of substrate atoms into Ge overlayer.
Surface sensitive core level spectra indicate that the reaction of Ge
with S atoms at Ge/ZnS(111) interfaces is much stronger than that of
Ge with Se atoms at Ge/ZnSe(100) interfaces.