FILM SUBSTRATE ORIENTATION RELATIONSHIP IN THE ALN/6H-SIC EPITAXIAL SYSTEM/

AIN has been grown on the (0001) basal and (<1(1)over bar 00>) prism f aces of 6H-SiC. High resolution transmission electron microscopy studi es show that, despite the very different symmetries of these two subst rate planes and their polar and nonpolar natures, the film/substrate o rientation relationship is identical for both systems. It is shown tha t this result is consistent with a geometrical method recently propose d for determining the orientation relationship between two crystals in a bicrystal.