PERSISTENT PHOTOCONDUCTIVITY AND PROPERTIES OF THE 2-DIMENSIONAL ELECTRON-GAS IN MODULATION-DOPED GAINAS ALINAS HETEROSTRUCTURES AFTER ILLUMINATION/

Authors
SAFFIAN B KRAAK W OELZE B KUNZEL H BOTTCHER J
Citation
B. Saffian et al., PERSISTENT PHOTOCONDUCTIVITY AND PROPERTIES OF THE 2-DIMENSIONAL ELECTRON-GAS IN MODULATION-DOPED GAINAS ALINAS HETEROSTRUCTURES AFTER ILLUMINATION/, Physica status solidi. b, Basic research, 196(2), 1996, pp. 323-333
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
196
Issue
2
Year of publication
1996
Pages
323 - 333
Database
ISI
SICI code
0370-1972(1996)196:2<323:PPAPOT>2.0.ZU;2-K
Abstract
The properties of the two-dimensional electron gas (2DEG) in MBE-grown low carrier density Ga0.47In0.53As/Al0.48In0.52 As heterostructures a fter illumination at low temperatures have been investigated. A strong persistent photoconductivity and drastic changes of low temperature e lectronic properties were observed. The pronounced changes of the quan tum oscillations of the magnetoresistivity (Shubnikov-de Haas effect) and of the quantum Hall effect clearly reveal an important increase of both electron concentration and carrier mobility in the two-dimension al interface layer. The variations of the electronic properties are at tributed to photoexcitation of electron-hole pairs in the GaInAs layer .