MEV-P ION-IMPLANTATION DAMAGE AND RAPID THERMAL ANNEALING EFFECTS IN FE-DOPED INP USING RAMAN-SCATTERING

The damage in Fe-doped InP induced by 1.0 MeV P ion implantation with doses ranging from 5 x 10(13) to 2 x 10(15) cm(-2) and effects of rapi d thermal annealing (RTA) in the range of 700-1050 degrees C were inve stigated by means of Raman scattering. The shift and asymmetrical broa dening of the longitudinal optical phonon peak (LO) and the appearance of a transverse optical mode (TO) show that the Raman scattering is v ery sensitive to implantation damage. For doses larger than 5X10(14) c m(-2), the TO and LO peaks were markedly broadened, even merged into a single peak, indicating cm an amorphous structure in the near surface region. Much of the primary damage can be annealed out after RTA at 8 00 degrees C for all implantation doses. For RTA below 900 degrees C, the residual damage decreased with increasing annealing temperature fo r the low dose case of 1x10(14) cm(-2), but increased for the high dos e case of 2x10(15) cm(-2). Only when the annealing temperature is over 900 degrees C, the residual defects of the high dose case drastically decrease, and nearly full recovery is obtained when the annealing tem perature is raised to 1000-1050 degrees C, (C) 1996 American Institute of Physics.