HOMOEPITAXIAL GROWTH OF GAN USING MOLECULAR-BEAM EPITAXY

In this article, experimental results are presented for the homoepitax ial deposition of a GaN overlayer onto a bulk single-crystal GaN subst rate using molecular beam epitaxy. Transmission electron microscopy sh ows a superior structural quality of the deposited GaN overlayer when compared to heteroepitaxially grown layers. Photoluminescence shows na rrow excitonic emission (3.467 eV) and the very weak yellow luminescen ce, whereas the bulk substrate luminescence is dominated by this deep level emission. These results show that homoepitaxy of GaN can be used to establish benchmark values for the optoelectronic properties of Ga N thin films. (C) 1996 American Institute of Physics.