RESONANT-TUNNELING OF HOLES IN DOUBLE-BARRIER STRUCTURES IN THE PRESENCE OF AN INPLANE MAGNETIC-FIELD

Citation
Jx. Zhu et al., RESONANT-TUNNELING OF HOLES IN DOUBLE-BARRIER STRUCTURES IN THE PRESENCE OF AN INPLANE MAGNETIC-FIELD, Journal of applied physics, 80(4), 1996, pp. 2291-2295
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
4
Year of publication
1996
Pages
2291 - 2295
Database
ISI
SICI code
0021-8979(1996)80:4<2291:ROHIDS>2.0.ZU;2-Q
Abstract
Using the asymptotic transfer-matrix method, we investigate the resona nt tunneling of holes in double-barrier semiconductor structures in th e presence of an in-plane magnetic field. The transmission coefficient s including 11 (light to light hole), hl (light to heavy hole), hh (he avy to heavy hole), and lh (heavy to light hole) are calculated as a f unction of energy. As in the case of nonzero parallel wave vectors, th e mixing of hole tunneling can also occur due to the in-plane magnetic field. Moreover, as has been observed by resonant magnetotunneling sp ectroscopy, we also find that the different resonances have quite diff erent magnetic-field dependences. (C) 1996 American Institute of Physi cs.