TRANSPORT-PROPERTIES OF HYDROGENATED P-GAINAS DOPED WITH CARBON

Highly carbon-doped Ga0.47In0.53As layers grown by chemical beam epita xy have been exposed to a deuterium plasma. Deuterium diffusion profil es reflect very strong C-D interactions. Concerning electronic transpo rt properties, from p-type when as-grown, these GaInAs sample turn to n-type after plasma exposure. Annealings of deuterated layers have als o been performed. They show that temperatures as high as 450 degrees C must be reached before p-type conductivity is fully restored in the m aterial. (C) 1996 American Institute of Physics.