OPTICAL-PROPERTIES OF ZN(S,SE) SAWTOOTH SUPERLATTICES GROWN BY ATOMICLAYER EPITAXY

''Sawtooth'' superlattices of Zn(S,Se) were grown on GaAs substrates b y a layer-by-layer atomic epitaxy growth technique. Larger scale varia tions in band gap were introduced by systematically varying the ratio of ZnS and ZnSe thickness over greater distance scales. These larger s cale variation were themselves repeated in order to produce a superlat tice in which the band gap had a sawtooth shaped profile. The structur e and optical properties of these new materials were characterized by x-ray diffraction and photoluminescence measurement. The x-ray diffrac tion spectra showed satellite peaks corresponding to the large scale v ariations in structure. The strong blue photoluminescence peaks were o bserved and consistent with hole trapping in the sawtooth potential we lls. (C) 1996 American Institute of Physics.