PHOTOLUMINESCENCE AND RAMAN-SCATTERING STUDIES OF 2 MEV YB-IMPLANTED INP AS A FUNCTION OF ETCHING DEPTH()

In ion-implanted semiconductors, details of the defects involved and a nnealing mechanisms which determine the final disorder structure are c omplicated and difficult to characterize. To investigate the residual defect distribution of the implanted layers, optical experiments, phot oluminescence, photoluminescence excitation, and Raman scattering have been performed on 2 MeV Yb+-implanted InP and subsequently annealed a t 750 degrees C for 15 min as a function of chemical etching depth (d) down to d=4.51xR(p) (R(p): projected range =410 nm). Their results we re compared with those obtained from Rutherford backscattering spectro metry (RBS) channeling analysis. The above optical experiments showed that two residual defective regions are present at depths of d=0.34-0. 80>< R(p) and about d=2.56>< R(p), whereas RBS channeling analysis ind icated the existence of the only former region. We assign the type of the two defective regions to ''clamshell'' defects in the former regio n and to ''end-of-range'' defects in the latter region. (C) 1996 Ameri can Institute of Physics.