MODELING THE GROWTH OF THIN SILICON-OXIDE FILMS ON SILICON

This article analyses the validity of the widely used semi-empirical o xidation models based on the Deal-Grove formulation in the light of re cent advances in the understanding of the oxidation process. An extens ion of the Deal-Grove formulation is suggested to account for the newe st experimental results. The introduced extension incorporates the eff ect of accelerated initial growth into the theoretical oxidation growt h model. There is a direct relationship between the newly-derived theo retical term for the initial growth rate and its widely-used empirical counterpart. (C) 1996 American Institute of Physics.