SIC FORMATION AT THE INTERFACE OF POLYIMIDE LANGMUIR-BLODGETT-FILM AND SILICON

X-ray photoelectron spectroscopy has been used to explore the process of the interaction between the polyimide film made by the Langmuir-Blo dgett method and the substrate Si(111). It is evident that the process includes three stages: The polymer degrades below temperature of abou t 500 degrees C resulting in some hydrocarbon species on the surface; at higher temperatures the residual hydrocarbons convert to some state of elemental carbon and then diffuse into the substrate to form ''C-S i alloy'' which is regarded as a precursor of SiC formation; SiC start s to form at about 700 degrees C and grows at higher temperatures. (C) 1996 American Institute of Physics.