X-RAY-ANALYSIS OF ZNSE ZNSTE QUANTUM STRUCTURE/

A novel microstructure of an A(1)BA(2)-type ZnSTe/ZnSe quantum structu re has been investigated by high-resolution x-ray two-axis diffraction , reflectivity, and x-ray topography which offer a nondestructive, hig h-strain-sensitive method for analyzing low-dimensional structures. Th e results show that the molecular-beam-epitaxy growth condition was we ll controlled to suppress dislocations extending from the substrate an d the epitaxial layers have high crystalline quality. The ZnS0.665Te0. 335 epilayer undergoes a tensile strain with epsilon(parallel to)(T)=2 .5633x10(-2) and epsilon(perpendicular to)T=8.8254x10(-2) while a comp ressed strain with epsilon(parallel to)B=2.7864x10(-3) and epsilon(per pendicular to)B=9.5061x10(-3) exists in the first layer of ZnSe. The i nterfacial roughness is about 5 Angstrom and the lateral correlation l ength greater than or equal to 2000 Angstrom. (C) 1996 American Instit ute of Physics.