It is found that when holes in GaAs/Al0.5Ga0.5As quantum wells are hea
ted by a longitudinal electric field, the absorption in the far-IR reg
ion of the spectrum changes. The spontaneous emission spectrum in the
far-IR range is measured. It is shown that the absorption and emission
are due to direct intersubband transitions of holes near the peaks in
the reduced density of states. The experimental data are in agreement
with a theoretical calculation. (C) 1996 American Institute of Physic
s.