STRONG ELECTRON-TUNNELING THROUGH A SMALL METALLIC GRAIN

Citation
Ds. Golubev et Ad. Zaikin, STRONG ELECTRON-TUNNELING THROUGH A SMALL METALLIC GRAIN, JETP letters, 63(12), 1996, pp. 1007-1012
Citations number
10
Categorie Soggetti
Physics
Journal title
ISSN journal
00213640
Volume
63
Issue
12
Year of publication
1996
Pages
1007 - 1012
Database
ISI
SICI code
0021-3640(1996)63:12<1007:SETASM>2.0.ZU;2-B
Abstract
Electron tunneling through mesoscopic metallic grains can be treated p erturbatively only under the conduction that the tunnel junction condu ctances are sufficiently small. If that is not the case, fluctuations of the grain charge become strong. As a result (i) the contributions o f all-including high energy-charge states become important, and (ii) t he excited charge states become broadened and essentially overlap. At the same time, the grain charge remains discrete and the system conduc tance e-periodically depends on the gate charge. We develop a non-pert urbative approach which accounts for all these features and calculate the temperature-dependent conductance of the system in the strong tunn eling regime at different values of the gate charge. (C) 1996 American Institute of Physics.