THERMAL NITRIDATION ENHANCED DIFFUSION OF SB AND SI(100) DOPING SUPERLATTICES

Depth dependent nitridation enhanced diffusion (NED) of Sb was investi gated by annealing Si(100) doping superlattice (DSL) structures in NH3 at 810-910 degrees C for 15-180 min. These multilayered DSLs consiste d of six 10 nm wide Sb doping spikes spaced 100 nm apart. Antimony NED , attributed to vacancy injection, indicated vacancy supersaturation v alues of 3-5. From the spatial decay of Sb NED, lower bounds for vacan cy diffusivities of (7.9+/-1.4)+/-10(-14), (1.2+/-0.2) x 10(-12), and 2.1 x 10(-11) cm(2)/s were obtained at 810, 860, and 910 degrees C, re spectively. Evidence of trap limited vacancy diffusivity was observed. (C) 1996 American Institute of Physics.