M. Homyonfer et al., SCANNING TUNNELING MICROSCOPE INDUCED CRYSTALLIZATION OF FULLERENE-LIKE MOS2, Journal of the American Chemical Society, 118(33), 1996, pp. 7804-7808
Amorphous precursors, like MoS3 (WS3), were shown before to be an idea
l precursor for the growth of inorganic fullerene-like material in a r
ather slow crystallization process which lasts anything from 1 h at 80
0-900 degrees C-1,C-2 to a few years at ambient conditions.(3,4) Using
a few microsecond short electrical pulses from the tip of a scanning
tunneling microscope, crystallization of amorphous MoS3 (a-MoS3) nanop
articles, which were electrodeposited on a Au substrate into MoS2 nano
crystallites with a fullerene-like structure (IF-MoS2), is demonstrate
d. The (outer) shell of each nanocrystallite is complete, which sugges
ts that the reaction extinguishes itself upon completion of the crysta
llization of the MoS2 layers. A completely different mode of crystalli
zation is observed in the case of continuous a-MoS3 films. Here tiny (
2-3 nm thick) 2H-MoS2 platelets are observed after the electrical puls
e, suggesting a very rapid dissipation of the thermal energy through t
he gold substrate, in the continuous domain. Since the reaction mechan
ism in both cases is believed to be the same, it is likely that the ma
in stimulus for the chemical reaction/crystallization of the IF materi
al results from the slow heat dissipation from the nanoparticle. The e
xothermicity of the chemical reaction may further promote the rate of
the process.