INASSBP-INAS-INASSBP LASER DOUBLE-HETEROSTRUCTURES WITH A P-N-JUNCTION IN THE ACTIVE-REGION

InAsSbP/InAs/InAsSbP double-heterostructures with a p-n junction in th e active region were investigated at 1.8 and 77 K by photo- and electr oluminescence methods. The energy band diagram of the double-heterostr uctures n-InAs0.73Sb0.09P0.18-InAs-p-InAs0.73Sb0.09P0.18 was used to a nalyze the radiative-transition mechanisms. Two strong radiative-recom bination channels were observed: a band-acceptor tunneling transition in the region of bending of the p-InAs bands at the p-InAs-p-InAsSbP h eterostructure and a transition of a Fermi quasilevel of nonequilibriu m electrons-acceptor in the compensated p-part of the active region. D epending on the tin doping level of the active region, laser transitio ns can be realized in each of the observed channels, i.e., at differen t wavelengths. (C) 1996 American Institute of Physics.