IMPURITY ENERGY-STATES IN CADMIUM-DOPED PB0.8SN0.2TE EPITAXIAL LAYERS

The optical and electrical properties of Pb1-xSnxTe(x approximate to 0 .2) epitaxial layers, grown by the hot-wall method and doped with cadm ium in amounts of 0.1, 0.5, and 1 at. %, are investigated. It has been established on the basis of optical measurements that an impurity lev el with a temperature-dependent activation energy is present in the ba nd gap. A theoretical analysis of the measurements of the Hall coeffic ient in p-type layers shows that a level is present at a depth of 0.00 9 eV in the band gap. (C) 1996 American Institute of Physics.