CHARACTERISTIC FEATURES OF THE MAGNETORESISTANCE OF PB1-XSNXTE(IN) AND PB1-XMNXTE(IN) ALLOYS IN ULTRASTRONG MAGNETIC-FIELDS

The magnetoresistance of n- and p-type alloys Pb1-xSnxTe(In) with diff erent compositions and of Pb1-xMnxTe(In) alloys in pulsed magnetic fie lds up to 40 T has been investigated. Localization of nonequilibrium c harge carriers in a magnetic field has been observed in n- and p-type Pb1-xSnxTe(In). The amplitudes of a large-scale potential well in Pb1- xSnxTe(In) are estimated. A model which relates the localization mecha nism to the tunneling of charge carriers from the allowed band to a si ngle-electron metastable impurity state is proposed. A localization ef fect has not been observed in Pb1-xMnxTe(In). (C) 1996 American Instit ute of Physics.