A. Baidullaeva et al., CHANGE IN THE ELECTRICAL-PROPERTIES OF CDTE SINGLE-CRYSTALS PRODUCED BY A SHOCK-WAVE FROM A LASER-PULSE, Semiconductors, 30(8), 1996, pp. 756-759
The changes induced in the electrical conductivity, photoluminescence,
and dislocation structure of p-CdTe single crystals produced by a sho
ck wave when laser radiation with power density similar to 10(8) W/cm(
2) interacts with an absorbing material are investigated. It is shown
that the electrical conductivity of p-CdTe single crystals increases a
t the moment the shock wave gasses and decreases after the shock wave
has passed. The relaxation time of this process equals 156 mu s. As al
e power density of the laser radiation increases, the number of disloc
ations is observed to increase and this increase is correlated with th
e increase in the residual resistance of the samples. A band associate
d with the recombination of free carriers on extended defects appears
at lambda = 840 nm in the photoluminescence spectrum after the passage
of the shock wave. The residual changes in the conductivity are due t
o the formation of stable lattice defects, The nature of the observed
effects is analyzed. (C) 1996 American Institute of Physics.