ELECTROCHEMICAL FORMATION AND OPTICAL-PROPERTIES OF POROUS GALLIUM-PHOSPHIDE

The mechanisms of porous gallium phosphide (por-GaP) formation in an e lectrochemical anodizing reaction in hydrofluoric acid based solution are studied. Scanning electron microscopy data show a microporous stru cture of por-GaP. The Raman scattering and photoluminescence spectra a re investigated as a function of the anodizing current density. It is found that the edge luminescence and Raman scattering become stronger and the phonon spectrum changes in por-GaP. These changes are attribut ed to spatial confinement in the submicron elements of the porous stru cture. (C) 1996 American Institute of Physics.