MEASUREMENT OF SHALLOW DOPANT IMPURITY PROFILE IN SILICON USING ANODIC SECTIONING AND LANGE METHOD OF HALL MEASUREMENT

Dopant profile analysis by successive anodic sectioning and sheet cond uctivity measurement is very well known. However, this requires prior knowledge of mobility as a function of dopant concentration for which there is considerable divergence in data in the literature. A new meth od has been given in this paper which does not require the knowledge o f mobility data. Here Hall voltages are measured after each anodic sec tioning and the dopant profile is generated. The profile generated by this method is compared with the profile obtained with the help of spr eading resistance probe and the two profiles agree very well within th e experimental error. Near the surface in both the profiles there is a hump. This is explained in terms of incomplete ionization of the dopa nts near the surface.