Organically modified silicate films prepared by sol-gel techniques hav
e been studied. The silicate structure has been modified by phenyl rad
icals. The films were prepared by cohydrolysis in various proportions
of tetraethyloxysilane and phenyl triethoxysilane or diphenyl diethylh
exyloxy diethoxydisiloxane. It is shown that phenyl radicals introduce
d into the silicate network reduce cross-linking in polymer structure,
their density and hydroxyl contents. These provide low shrinkage, hig
h cracking resistance, and low dielectric constant and loss tangent of
phenyl-modified silicate films. Some questions of applications of suc
h films in the process of planarization of multilevel interconnections
are briefly discussed as well.