MULTIPLE CONDUCTION BEHAVIOR OF BARUO3 THIN-FILM PREPARED BY PULSED-LASER ABLATION DEPOSITION

In this paper, thin films of BaRuO3 prepared on a Si substrate by the pulsed laser ablation deposition method under oxygen ambient have been studied by means of X-ray diffraction, emission spectroscopy, Rutherf ord backscattering spectroscopy, RT Hall measurement and resistivity m easurement. It is interesting to find that BaRuO3 thin films, having a different thermal history examined in the same temperature range, sho w different conduction types including metallicity, semiconduction and semiconductor-metal transition. The explanation about the findings ar e given using a suggested modified energy band diagram. It is believed that the versatile electrical behavior is helpful for the use in elec trical contact materials.