LOW-TEMPERATURE ATMOSPHERIC-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF MOLYBDENUM NITRIDE THIN-FILMS

Amorphous molybdenum nitride thin films were deposited from tetrakis(d imethylamido) molybdenum(IV), Mo(N(CH3)(2))(4), and ammonia at low sub strate temperatures (200-400 degrees C). The films were characterized by Rutherford backscattering spectroscopy, elastic recoil detection an d X-ray photoelectron spectroscopy. Rutherford backscattering gave a N /Mo = 1.4-1.5 stoichiometry that did not vary significantly with depos ition temperature. The hydrogen content, determined by elastic recoil detection, varied from H/Mo = 1.0 to 0.45 with the content decreasing as the deposition temperature was increased. Carbon contamination was not observed in the film bulk. The films had high resistivities (appro ximate to 10(4) mu Omega cm).