R. Fix et al., LOW-TEMPERATURE ATMOSPHERIC-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF MOLYBDENUM NITRIDE THIN-FILMS, Thin solid films, 288(1-2), 1996, pp. 116-119
Amorphous molybdenum nitride thin films were deposited from tetrakis(d
imethylamido) molybdenum(IV), Mo(N(CH3)(2))(4), and ammonia at low sub
strate temperatures (200-400 degrees C). The films were characterized
by Rutherford backscattering spectroscopy, elastic recoil detection an
d X-ray photoelectron spectroscopy. Rutherford backscattering gave a N
/Mo = 1.4-1.5 stoichiometry that did not vary significantly with depos
ition temperature. The hydrogen content, determined by elastic recoil
detection, varied from H/Mo = 1.0 to 0.45 with the content decreasing
as the deposition temperature was increased. Carbon contamination was
not observed in the film bulk. The films had high resistivities (appro
ximate to 10(4) mu Omega cm).