ANALYSIS OF AUGER SPUTTER DEPTH PROFILES WITH A RESOLUTION FUNCTION

We have determined the depth resolution function from the Auger sputte r depth profiles of GaAs/AlGaAs specimens which have abrupt interfaces . We have also applied the obtained resolution function to the analysi s of a GaAs/AlGaAs sample containing aluminium graded-layers in order to know the effectiveness of the depth resolution function. The result ing aluminum graded-layer thickness is about 14 nm, which is in good a greement with the values estimated from the growth rate of the thin la yer at preparing the specimen with molecular beam epitaxy. The resulti ng resolution function can be fitted by three parameters: atomic mixin g, surface roughness and information depth, which was proposed by Hofm ann.