DAMAGE PROFILING OF AR-ENERGY ION-SCATTERING SPECTROSCOPY( SPUTTERED SI(100) SURFACE BY MEDIUM)

To study the damage profile development due to ion bombardment as a fu nction of the ion dose and the ion incidence angle effect on the damag e profiles, MEIS spectra were taken from a clean Si surface and ion be am sputtered Si surfaces. MEIS analysis shows that the surface layer b ecomes amorphous initially and the amorphous surface layer gets thicke r for a Si(100) surface bombarded with 3 keV Ar+ ions. The damage prof ile of the Si(100) saturated at the ion dose of 3 x 10(16) ion/cm(2) a t the incidence angle of 35 degrees from the surface normal, At the sa turation ion dose, the depth of the damaged layer was 9.6 nm. The dept h of the damaged layer was significantly reduced from 14.2 nm at the s urface normal to 4.8 nm at the incidence angle of 80 degrees. Though t he depth of the damaged layer was minimized for the sputtering at the extremely glancing angle of 80 degrees, the damaged layer did not disa ppear but remained as a very shallow surface layer. These observations were reproduce by computer simulations by the Marlowe code qualitativ ely.