INFLUENCE OF ION-IMPLANTATION ON NATIVE OXIDATION OF SI IN A CLEAN-ROOM ATMOSPHERE

We investigated the native oxidation of ion-implanted Si(100) surfaces in anticipation of a future necessity for controlling native oxidatio n during semiconductor device fabrication. Quantitative analysis of XP S spectra was used to estimate SiO2 and SiO, thicknesses. Native oxida tion of Si(100) wafers in which were implanted with As, P, B or Si was examined. The results show that oxidation of As or P-implanted Si is much faster than that of Si without implantation, however, no conclusi ve difference was found between the oxidation rates of B or Si-implant ed Si and that of Si without implantation. These results indicate that native oxidation is influenced mainly by the species of implanted ion s. Neither ion-implantation induced defects nor surface roughness was found to have major effect on the native oxidation rate.