DISSOCIATIVE SCATTERING OF LOW-ENERGY SIF3-200 EV) ON CU(100) SURFACE( AND SIF+ IONS (5)

Dissociative scattering of molecular SIF3+ and SiF+ ions from a Cu(100 ) single crystal surface has been investigated in the incident energy range from 5 eV to 200 eV with a scattering angle of 77 degrees. The s cattered ion intensity of dissociative ions and parent molecular ions were measured as a function of incident ion energy. The observed data show that onset energies of dissociation for SiF3+ and SiF+ ions are 3 0 eV and 40 eV, respectively. The obtained threshold energies are cons istent with a impulsive collision model where the dissociation of inci dent ion is caused by vibrational excitation during collision.