H. Tsuji et al., FUNDAMENTAL-STUDY ON POWDER-SCATTERING IN POSITIVE-ION AND NEGATIVE-ION IMPLANTATION INTO POWDER MATERIALS, Applied surface science, 101, 1996, pp. 342-346
Citations number
4
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
The scattering of powder particles is caused by charging in the ion im
plantation of positive ions into dielectric powders without a charge c
ompensation, this makes dose control difficult. We have studied the pa
rticle-scattering phenomenon in ion implantation into spherical powder
s both theoretically and experimentally. Taking into account Coulomb f
orce, Van der Waals force and a gravity working on a sphere, the force
balance equation was driven to give the threshold charging voltage ab
ove which the charged sphere begins to be scattered. In positive-argon
-ion implantation into three oxide powders at an average size of 5, 11
5 and 425 mu m, particle-scattering was observed above each ion-accele
ration voltage (i.e., charging voltage) of 6.5, 1.0 and 2.7 kV, respec
tively. These voltages were in good agreement with the predicted thres
hold charging voltages. Conversely, in the negative-carbon-ion implant
ation, on the contrary, there was no scattering for all samples even a
t an ion acceleration voltage of 20 kV. The negative-ion implantation
technique was found to be a non-scattering implantation method for pow
ders.