DECOMPOSITION OF TRIETHYLINDIUM (TEI) ON GAP(001) SURFACE STUDIED BY TPD, XPS AND RHEED

Authors
MURATA J TAKEUCHI T SUZUKI Y SANADA N FUKUDA Y
Citation
J. Murata et al., DECOMPOSITION OF TRIETHYLINDIUM (TEI) ON GAP(001) SURFACE STUDIED BY TPD, XPS AND RHEED, Applied surface science, 101, 1996, pp. 417-420
Citations number
21
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
101
Year of publication
1996
Pages
417 - 420
Database
ISI
SICI code
0169-4332(1996)101:<417:DOT(OG>2.0.ZU;2-2
Abstract
Decomposition of triethylindium (TEI) on a GaP(001) surface with and w ithout hydrogen gas ambience has been studied using temperature progra mmed desorption (TPD), X-ray photoelectron spectroscopy (XPS) and refl ection high-energy electron diffraction (RHEED). We find TPD peaks of ethylene at about 110 and 330 degrees C and those of hydrogen at 110, 220 and 330 degrees C. Desorption products are not changed with and wi thout hydrogen gas ambience. The intensity ratio of the ethylene peak at about 330 to that at 110 degrees C increases with hydrogen gas ambi ence. The mechanism of decomposition of TET on the GaP(001) surface is discussed.