SYNTHESIS OF METASTABLE GROUP-IV ALLOY SEMICONDUCTORS BY ION-IMPLANTATION AND ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION

In order to synthesize metastable group-IV binary alloy semiconductor thin films on Si, Si(100) substrates were implanted with 17 keV C ions for Si1-yCy/Si and alternatively with 110 keV Sn ions for Si1-zSnz/Si . Subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 4 00 keV Ar ions at 300-400 degrees C has induced a good epitaxial growt h up to the surface both for Si1-yCy/Si (y = 0.014 at peak concentrati on) and for Si1-zSnz/Si (z = 0.029 at peak concentration), X-rap diffr action measurements have shown a growth of Si1-yCy/Si with smaller ten sile strain than for Si1-yCy/Si grown by solid phase epitaxial growth (SPEG) up to 650 degrees C. Photoluminescence measurements have reveal ed properties of defect related to I-1(Ar) line and G line emissions f or IBIEC-grown Si1-yCy/Si samples, IBIEC has induced an incomplete cry stalline growth and a loss of implanted Sn atoms for Si1-zSnz/Si(z = 0 .086 at peak concentration).