ELECTRICAL-PROPERTIES OF METAL SI1-XGEX/SI(100) HETEROJUNCTIONS/

Authors
SHINODA H KOSAKA M KOJIMA J IKEDA H ZAIMA S YASUDA Y
Citation
H. Shinoda et al., ELECTRICAL-PROPERTIES OF METAL SI1-XGEX/SI(100) HETEROJUNCTIONS/, Applied surface science, 101, 1996, pp. 526-529
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
101
Year of publication
1996
Pages
526 - 529
Database
ISI
SICI code
0169-4332(1996)101:<526:EOMSH>2.0.ZU;2-G
Abstract
The electrical properties of Zr/ and Ti/Si1-xGex/(100)Si heterostructu res have been examined. The Schottky barrier heights (SBH's) of as-dep osited diodes determined from I-V characteristics are 0.53 and 0.55 eV for Zr/ and Ti/n-Si0.8Ge0.2, respectively. It can be seen that p-Si0. 8Ge0.2 diodes tend to have smaller SBH's than n-Si0.8Ge0.2 ones for bo th metals. This fact is consistent with the contact resistivity measur ed for Zr/n(+)- and (+)-Si0.8Ge0.2/(100)Si.Zr/p(+)-Si0.8Ge0.2/(100)Si.