LOW-PRESSURE MOCVD OF TIN THIN-FILMS

From multiple regression analysis in the bottom coverage and resistivi ty of TiN films deposited using tetrakis(diethylamino)titanium (TDEAT) , contour maps were calculated as functions of wafer temperature and r eactor pressure. High bottom coverage and low resistivity were predict ed at low pressure and low temperature with NH3 additives. Films have been deposited below 400 degrees C and total reactor pressures below 1 33.3 Pa. Especially by adding a little NH3 to TDEAT, bottom coverages of 100% have been accomplished in 4.0 aspect ratio contacts with 300 n m diameter. Film resistivities have been also decreased from 24,000 mu Omega cm to about 10,000 mu Omega cm with 15 seem NH3.