PREPARATION OF BLUE-EMITTING SRGA2SE4-CE THIN-FILMS BY MULTISOURCE DEPOSITION

IIaIIIb(2)VIb(4) ternary compound thin film doped with Ce3+ ion is of interest for full color thin-film EL display, because it shows blue em ission with good chromaticity. In this investigation, SrGa2S4:Ce thin films were prepared by the multi-source deposition technique using Sr, Ga2Se3, Se and CeF3 sources. Structural property and composition of t he films deposited were characterized and the growth mechanism of the film was discussed. The SrGa,Se, film could be successfully deposited without SrSe and GaSe phases at a Ga2Se3/Sr flux ratio of 56 and at a substrate temperature of 450 degrees C, It was shown that when Ga2Se3 evaporates from the source, it decomposes into GaSe and Se-2. It is su ggested from these results that the formation of SrGa2Se4 or SrSe depe nds strongly on the substrate temperature.