Pj. Verpoort et al., INVESTIGATION ON THE ELECTROCHEMISTRY AND ETCHING AT THE (100)GAAS-VERTICAL-BAR-HIO3 INTERFACE, Journal of electroanalytical chemistry [1992], 411(1-2), 1996, pp. 67-72
The electrochemical and etching behaviour of n- and p-(100)GaAs in aqu
eous iodic acid solutions (pH 0) was studied by rotating-(ring)-disk v
oltammetry, impedance measurements and etch rate measurements. Under a
ll circumstances, a competition for HIO3 exists between electrochemica
l and etching reactions, the supply of HIO3 to the surface being diffu
sion-controlled. A particularly interesting effect is the cathodic pho
tocurrent enhancement, up to a factor of about 6, which is observed at
the p-GaAs electrode. ?The experimental results allow us to propose m
echanisms for the various processes under investigation. Differences i
n electrochemical and etching behaviour compared with the systems GaAs
/IO3- (pH 14) and InP/HIO3 (pH 0) are discussed.