GROWTH OF PBS AND CDS THIN-FILMS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION USING DITHIOCARBAMATES

Thin films of cadmium and lead sulphides grown by chemical vapour depo sition (CVD) and remote plasma enhanced chemical vapour deposition (RP ECVD) using dithiocarbamates as precursors were prepared on fused sili ca, sapphire, (111)Si and (111)InP substrates. These films were deposi ted in the temperature range 473-873 K. It was established that the ac tivation energy of the CVD process is 191.5 +/- 1.5 kJ mol(-1). The st ructure of polycrystalline films was halenide for PbS and wurtzite for CdS. It was also found that r.f.-plasma activation of the gas phase d ecreases remarkably the growth temperature and orders the film structu re. RPECVD sulphide films had a high degree of preferred orientation.