PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF THIN-FILMS FROM TETRAETHOXYSILANE AND METHANOL - OPTICAL-PROPERTIES AND XPS ANALYSES

The thin films were produced from tetraethoxysilane (TEOS) and TEOS/me thanol mixtures by the plasma-enhanced chemical vapour deposition tech nique in a diode planar reactor capacitatively coupled to a r.f. gener ator at 13.56 MHz. The optical properties of the films deposited on si licon substrates and on glass substrates were studied by means of spec trophotometry in the visible and monochromatic ellipsometry applied at the wavelength of 632.8 nm. The dependences of the deposition rate, t he refractive and absorption indices on the deposition parameters were determined for the substrates mentioned. The X-ray photoelectron spec troscopy analyses were performed for the films deposited on the silico n substrates to find film composition dependences on the deposition co nditions.