PULSED-LASER DEPOSITION OF BI2TE3 THIN-FILMS

Citation
A. Dauscher et al., PULSED-LASER DEPOSITION OF BI2TE3 THIN-FILMS, Thin solid films, 280(1-2), 1996, pp. 61-66
Citations number
20
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
280
Issue
1-2
Year of publication
1996
Pages
61 - 66
Database
ISI
SICI code
0040-6090(1996)280:1-2<61:PDOBT>2.0.ZU;2-X
Abstract
A feasibility study of thin stoichiometric Bi2Te3 films by pulsed lase r deposition (PLD) was performed, the difficulty arising from the diff erences of vapour pressure between Te and Bi. The films were elaborate d using a pulsed Nd:YAG laser under various experimental conditions an d were characterized by electron microprobe, scanning electron microsc opy, X-ray diffraction and secondary ion mass spectroscopy analyses. C ongruent transfer of stoichiometry occurs from the target to the subst rate on several cm(2) and a good crystallinity can be achieved, even o n glass substrates at room temperature, by combining convenient target to substrate facing and distance, respectively. Depletion in Te obser ved in some films may result from a laser beam-plume interaction that was put forward during elaboration of films on large scale substrates.