EPITAXIALLY GROWN MOLYBDENUM THIN-FILMS DEPOSITED BY LASER-ABLATION ON (100)MGO SUBSTRATES

We report here on the deposition process by laser ablation and on the characterization of molybdenum films epitaxially grown on (100)MgO sin gle-crystal substrates. The 50 nm (100)Mo films are epitaxied. These f ilms have a low resistivity (similar to 5.3 mu Ohm cm at 273 K) close to the pure molybdenum resistivity value (4.85 mu Ohm cm at 273 K). Th e low resistivity corroborates the quality of the Mo films in spite of a very low deposition rate (similar to 25 nm h(-1)). An other orienta tion has been also encountered. The complementary characterization met hods (X-ray diffraction in theta-2 theta or oscillating crystal mode, reflection high-energy electron diffraction and electron channelling p atterns) have shown it to be the (110)Mo orientation.