SITE SYMMETRY OF YB3+ IN IN0.5GA0.5P

Citation
Bs. Jeong et al., SITE SYMMETRY OF YB3+ IN IN0.5GA0.5P, Thin solid films, 280(1-2), 1996, pp. 115-116
Citations number
14
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
280
Issue
1-2
Year of publication
1996
Pages
115 - 116
Database
ISI
SICI code
0040-6090(1996)280:1-2<115:SSOYII>2.0.ZU;2-K
Abstract
The site symmetry of Yb3+ in In0.5Ga0.5P grown by liquid phase epitaxy has been investigated using a polarized luminescence spectroscopic te chnique. The site symmetry of indium in In0.5Ga0.5P was lowered from T -d to C-2v resulting from substitution of indium by ytterbium. The low ering symmetry was confirmed by the spectroscopic observation of the s plits of Gamma(8) levels of T-d in C-2v symmetry. The substitutional s ite symmetry of Yb3+ in In0.5Ga0.5P, i.e. Yb-In(3+), was revealed as C -2v.