CRYSTALLIZATION KINETICS OF SBXSE100-X THIN-FILMS

The crystallization kinetics in SbxSe100-x films with 39 less than or equal to x less than or equal to 58 is studied by monitoring the optic al transmission of the films during both isothermal and constant rate heatings. The structure of the films upon crystallization and at certa in intermediate stages is studied by electron microscopy techniques. T he results are analyzed in the frame of the Johnson-Mehl-Avrami theory in order to determine the kinetic parameters (Avrami exponent, activa tion energy and frequency factor) in addition to the crystallization t emperature. The results show that film crystallization is always prece eded by a relaxation process which modifies substantially the optical properties of the amorphous material. Amorphous films with composition s close to the stoichiometric compound (Sb2Se3) are found to show the highest activation energy for crystallization.