A NEW METHOD FOR DETERMINING THE SECONDARY-ELECTRON YIELD DEPENDENCE ON ION ENERGY FOR PLASMA EXPOSED SURFACES

A new experimental method for determining the secondary electron yield for plasma exposed surfaces is described. From the measurement of the plasma condition and the total current generated when a voltage pulse is applied to a target material exposed to a plasma, the dependence o f the secondary electron yield of that target on ion energy can be ext racted. The secondary electron yield Is determined by an analytical mo del of the plasma ion, electron, and displacement currents. Experiment al results for an aluminum target correlate well with previous seconda ry electron measurements which used a traditional technique, Secondary electrons yield data of other materials: single crystal silicon, alum inum, titanium nitride, and silicon dioxide are also extracted.