STABLE TO UNSTABLE TRANSITION IN THE (CS,O) ACTIVATION LAYER ON GAAS(100) SURFACES WITH NEGATIVE ELECTRON-AFFINITY IN EXTREMELY HIGH-VACUUM

Citation
S. Pastuszka et al., STABLE TO UNSTABLE TRANSITION IN THE (CS,O) ACTIVATION LAYER ON GAAS(100) SURFACES WITH NEGATIVE ELECTRON-AFFINITY IN EXTREMELY HIGH-VACUUM, Applied surface science, 99(4), 1996, pp. 361-365
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
99
Issue
4
Year of publication
1996
Pages
361 - 365
Database
ISI
SICI code
0169-4332(1996)99:4<361:STUTIT>2.0.ZU;2-U
Abstract
The degradation of GaAs photocathodes with negative electron affinity, activated by (Cs, O) and (Cs, F) layers, was studied in a vacuum setu p with a basic pressure below 10(-12) mbar. Activation and degradation are similar for (Cs, O) and (Cs, F) activation. A new type of degrada tion was observed during the operation of a (Cs, O)-activated cathode, showing up as an instability after exposure to oxygen and subsequent reactivation with Cs. The same amounts of oxygen and Cs added to a (Cs , F)-activated surface did not influence its stability. A rearrangemen t of oxygen atoms in the activation layer is suggested as an explanati on of these observations.