ON THE APPLICATION OF XPS TO CERIA FILMS GROWN BY MOCVD USING A FLUORINATED PRECURSOR

Citation
D. Chadwick et al., ON THE APPLICATION OF XPS TO CERIA FILMS GROWN BY MOCVD USING A FLUORINATED PRECURSOR, Applied surface science, 99(4), 1996, pp. 417-420
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
99
Issue
4
Year of publication
1996
Pages
417 - 420
Database
ISI
SICI code
0169-4332(1996)99:4<417:OTAOXT>2.0.ZU;2-P
Abstract
MOCVD grown CeO2 films using the precursor Ce(fod)(4) (where fod-H = , 2,2,3,3-heptafluoro-7,7-dimethyloctane-3,5-dione) have been analysed b y XPS. Residual fluorine was found to be in the form of fluoride and a n organo-related fluorine species which converted rapidly to fluoride under application of the XPS technique. At the same time the CeO2 spec trum developed the presence of Ce3+. The rate of conversion was found to be sample dependent.